Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell

In this paper, we use numerical simulations to investigate ultrathin Cu (In1−xGax) Se2 solar cells. the first part, focus on cell configuration in which PV parameters fit and match fabricated characteristics. Our goal is impact of different loss mechanisms, such as interface trap density (Dit) absorber (Nt), pitch sizes performances. Dit defines number carrier traps at CIGS/Al2O3 interfaces recombine with photogenerated carriers. Nt layer. Recombination through has been found be primary process investigated cell. Additional reveal appreciable gains performance for various sizes, doping densities, Ga content, graded bandgap under AM1.5 illumination. Research during recent decade clarified that most promising strategy achieve maximum efficiency consists so-called tandem configuration. Therefore, here propose a u-CIGS/PERT silicon device employing, top cell, u-CIGS optimized take into account above procedure. The results these provide insights optimization ultrathin-film CIGS